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VAPORIZATION SUBSTRATE OF "DOPED" MATERIAL=90 NM.
ALTHOUGH YOUR PICTURES MAY BE TRUE, FROM MY KNOWLEDGE 90 NM REFERS TO THICKNESS OF VAPORIZED "DOPED" MATERIAL THAT SETTLES ON SILICA INSULATE MATERIAL. PERHAPS THIS PROCESS FORMS "MASK" THAT IS "WASHED" OUT AFTER VAPORIZATION, THAT CONTROLS WHERE "DOPED" MATERIAL SETTLES DURING VAPORIZATION, WASHED, THEN NEXT LAYER APPLIED, MASKED, DOPED, WASHED, UNTIL TOTAL NUMBER OF "TRANSISTORS" HAVE BEEN APPLIED.
SIGNED:PHYSICIAN THOMAS STEWART VON DRASHEK M.D.
Posted by (10 comments )
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Roadmap to a dead end street
Sure, we have pushed the lithographic boundary to even smaller geometries. Now, ASML want to sell us on the idea of a Microlithography immersion system. Lets take another look at this. Is it better to build 65nm highways for electrons drivers to travel. Or maybe its time to change drivers, photons traveling on highways of light are much earier to build.
Posted by ASML burke (1 comment )
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Yeah right... Good thinking...
As the semicondutor industry TAM approaches $100 BILLION, we should all stop and play with lab toys using photons. Thanks for your insight. Instead, the industry will do exactly what they must do: Pursue extention of existing technology as aggressivley as possible and invest in R&D to find the inevitable replacement tchnologies. The folks who find the solutions to get us to 25nm and beyond using the poor, washed-up electrons will make BILLION$.
Posted by woggs123 (22 comments )
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